Opto semiconductor element
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Using our company's exclusive technology, we have produced a AlGaInP red light emitting diode of double hetero structure that emits light of wavelength 650 nm. The light emitting section is either 50 or 150 micrometers in diameter, and emits light of high brightness. An externally mounted lens can be used to produce a spot of light. Optical design is easy. This diode is ideal for use in photoelectric switches.
■Features
Ta=25°C
| Type No. | Radiant intensity Po(mW) |
Forward voltage VF(V) |
Peak emission wavelength λP(nm) Typ. |
Harf angle Δθ( °) Typ. |
Operating temp. Topr. (°C) |
|||
|---|---|---|---|---|---|---|---|---|
| Typ. | IF(mA) | Max. | IF(mA) | |||||
| BL05-1101 |  [150KB] |
0.2 | 20 | 3 | 20 | 650 | ±60 | -30∼+85 |
| BL15-1101 | [150KB] |
0.4 | 20 | 2.8 | 20 | 650 | ±60 | -30∼+85 |
| BL15-1212 | [150KB] |
0.5 | 20 | 2.8 | 20 | 650 | ±18 | -30∼+85 |
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