Opto semiconductor element

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Pin-point LED (AlGaInP)

Using our company's exclusive technology, we have produced a AlGaInP red light emitting diode of double hetero structure that emits light of wavelength 650 nm. The light emitting section is either 50 or 150 micrometers in diameter, and emits light of high brightness. An externally mounted lens can be used to produce a spot of light. Optical design is easy. This diode is ideal for use in photoelectric switches.

■Features
Ta=25°C

Type No. Features Radiant
intensity
Po(mW)
Forward
voltage
VF(V)
Peak
emission
wavelength
λP(nm)
Typ.
Harf
angle
Δθ( °)
Typ.
Operating
temp.
Topr.
(°C)
Typ. IF(mA) Max. IF(mA)
BL05-1101 pdf light diameterφ50μm 0.2 20 3 20 650 ±60 -30∼+85
BL15-1101H pdf light diameterφ150μm 0.8 20 2.8 20 650 ±60 -30∼+85
BL15-1212H pdf light diameterφ150μm
narrow directivity
1.0 20 2.8 20 650 ±18 -30∼+85

Kodenshi with visual images

ISO

RoHS DIRECTIVE COMPLIANCE

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