Infrared emitting diode (GaAs) : Products

Opto semiconductor element

Emitter

Visible High Brightness LED

Detector

Sensor/Opto component/module

Photointerrupter

Optical digital encoder

Photo IC/LSI

Silicon product

Photodiode chips

MEMS

Group company products

: Kodenshi parts in applications

These are often used as light sources for optical sensors in invisible infrared LEDs. They provide large emitted light output. In the case of GaAs, the emitted light wavelength is generally 940 nm. Our company uses the EL- type. There are also other types, such as the high output CL- type (GaAlAs, 880 nm) and the FL- type (GaAlAs, 830 nm). The FL- type, with its fast response, is optimum for use in communications. There are many types of packages, including the can type, the resin mold type and the ceramic type. There are also many shapes, that can be selected according to the application.

■Features
Ta=25°C

Type No.		Radiant in tensity Po(mW)		Forward voltage V_F(V)		Peak emission wavelength λP(nm) Typ.	Half angle Δθ(°) Typ.	Operating topr. Topr. (°C)
Type No.		Typ.	I_F(mA)	Max.	I_F(mA)	Peak emission wavelength λP(nm) Typ.	Half angle Δθ(°) Typ.	Operating topr. Topr. (°C)
EL-1CL3	[79.7KB]	4.5	40	1.5	40	940	±53	-20∼+70
EL-1K3	[70.7KB]	4	100	1.7	100	940	±36	-40∼+100
EL-1KL3	[78.0KB]	7	100	1.7	100	940	±15	-30∼+100
EL-1KL5	[78.0KB]	5	100	1.7	100	940	±5	-40∼+100
EL-1ML2	[66.8KB]	6.5	50	1.5	50	940	±32	-25∼+70
EL23G	[64.5KB]	15mV	50	1.6	60	940	±30	-20∼+100
EL302	[70.5KB]	2mV	50	1.6	50	940	±30	-25∼+85
EL305	[70.9KB]	10μA	20	1.5	20	940	±30	-25∼+85
EL313	[66.8KB]	1.8mA	20	1.5	30	940	±20	-20∼+80
EL321	[64.3KB]	550μA	4	1.5	20	940	±30	-20∼+85
EL333	[87.6KB]	4.0mV	20	1.5	50	940	±20	-25∼+85
EL333F	[86.7KB]	1.8mV	20	1.2	50	940	±20	-25∼+85
EL333F1	[87.9KB]	1.8mV	20	1.2	50	940	±20	-25∼+85