Opto semiconductor element

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Infrared emitting diode (GaAs)

Infrared LEDs, invisible to humans and having high output power, are often used as light source for optical sensors. GaAs, generally having 940nm wavelength, provided as EL-series, as for GaAlAs, having a wide range of wavelengths, provided as high-output CL-series (880 nm), ML-series (865nm) and HL series (850nm) in our products line. KODENSHI also provides different types of package, such as can type, resin mold type, ceramic type, and also many shapes, that can be selected according to the applications.
move to Infrared emitting diode(GaAlAs)

■Features
Ta=25°C

Type No. Radiant in
tensity
Po(mW)
Forward
voltage
VF(V)
Peak
emission
wavelength
λP(nm)
Typ.
Half angle
Δθ(°)
Typ.
Operating
topr.
Topr.
(°C)
Typ. IF(mA) Max. IF(mA)
EL-1CL3 pdf 1.8 40 1.5 40 940 ±53 -20~+70
EL-1K3 pdf 4.0 100 1.7 100 940 ±36 -40~+100
EL-1KL3 pdf 7.0 100 1.7 100 940 ±15 -30~+100
EL-1KL5 pdf 5.0 100 1.7 100 940 ±5 -40~+100
EL23G pdf 8mV 50 1.6 60 940 ±30 -20~+100
EL321 pdf 550μA 4 1.5 20 940 ±30 -20~+85
EL333F pdf 3.0mV 20 1.2 50 940 ±20 -25~+85
EL333F1 pdf 3.0mV 20 1.2 50 940 ±20 -25~+85
EL341M pdf 1.6 20 1.5 20 940 ±14 -30~+85
EL342M pdf 0.57 20 1.5 20 940 ±35 -30~+85
EL615 pdfnew 1.9 20 1.6 20 940 ±20 -20~+70

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