Opto semiconductor element

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Infrared emitting diodes (GaAlAs)

Infrared LEDs, invisible to humans and having high output power, are often used as light source for optical sensors. GaAs, generally having 940nm wavelength, provided as EL-series, as for GaAlAs, having a wide range of wavelengths, provided as high-output CL-series (880 nm), ML-series (865nm) and HL series (850nm) in our products line. KODENSHI also provides different types of package, including can type, resin mold type, ceramic type, and also many shapes, that can be selected according to the applications.
move to Infrared emitting diode(GaAs)

■Features
Ta=25°C

Type No. Radiant intensity
Po(mW)
Forward voltage
VF(V)
Peak
emission
wavelength
λP(nm)
Typ.
Harf
angle
Δθ(°)
Typ.
Operating
topr .
Topr.
(°C)
Typ. IF(mA) Max. IF(mA)
CL-1CL3 pdf 7 40 1.5 40 880 ±53 -20~+70
CL-1KL3 pdf 7.5 100 1.7 100 880 ±17 -30~+100
CL-1KL7 pdf 8 100 2 100 880 ±8 -30~+100
CL-203 pdf 5 50 2 80 880 Max.±9 -40~+100
CL-205 pdf 10 50 2 50 870 ±9 -30~+100
CL-207 pdf 2 20 1.6 20 880 ±35 -30~+100
CL-209 pdf 4.5 20 1.6 20 880 ±85 -20~+80
CL-211 pdf 5 20 1.6 20 870 ±12 -30~+85
ML-1CL3 pdf 8 20 1.7 50 865 ±53 -20~+70
ML341H pdf 3.2 20 1.4 20 870 ±14 -30~+85
HL601 pdf 1.5 20 1.7 20 850 ±75 -20~+70
ML615 pdfnew 2.8 20 1.6 20 875 ±20 -20~+70
HL615 pdfnew 2.6 20 1.6 20 850 ±20 -20~+70

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