Opto semiconductor element

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Infrared emitting diodes (GaAlAs)

These are often used as light sources for optical sensors in invisible infrared LEDs. They provide large emitted light output. In the case of GaAs, the emitted light wavelength is generally 940 nm. Our company uses the EL- type. There are also other types, such as the high output CL- type (GaAlAs, 880 nm) and the FL- type (GaAlAs, 830 nm). The FL- type, with its fast response, is optimum for use in communications. There are many types of packages, including the can type, the resin mold type and the ceramic type. There are also many shapes, that can be selected according to the application.

■Features
Ta=25°C

Type No. Radiant intensity
Po(mW)
Forward voltage
VF(V)
Peak
emission
wavelength
λP(nm)
Typ.
Harf
angle
Δθ(°)
Typ.
Operating
topr .
Topr.
(°C)
Typ. IF(mA) Max. IF(mA)
CL-1CL3 pdf[150KB] 7 40 1.5 40 880 ±53 -20∼+70
CL-1KL3 pdf[150KB] 7.5 100 1.7 100 880 ±17 -30∼+100
CL-1KL7 pdf[150KB] 8 100 2 100 880 ±8 -30∼+100
CL-203 pdf[150KB] 5 50 2 80 880 Max.±9 -40∼+100
CL-205 pdf[150KB] 10 50 2 50 870 ±9 -30∼+100
CL-207 pdf[150KB] 2 20 1.6 20 880 ±35 -30∼+100
CL-208 pdf[150KB] 2 20 1.6 20 880 ±40 -20∼+80
CL-209 pdf[150KB] 4.5 20 1.6 20 880 ±85 -20∼+80
CL-211 pdf[150KB] 5 20 1.6 20 870 ±12 -30∼+85
CL-212 pdf[150KB] 5.6 50 2 50 870 ±9 -30∼+100
ML-1CL3 pdf[150KB] 8 20 1.7 50 865 ±53 -20∼+70
ML-1K3 pdf[150KB] 8.5 50 1.7 50 865 ±36 -30∼+100
HL601 pdf[150KB] 1.5 20 1.7 20 850 ±75 -20∼+70

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